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Power MOSFETs

By STMicroelectronics 74

Power MOSFETs

STMicroelectronics' MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V as well as low gate charge and low on-resistance, all combined with state-of-the-art packaging. ST's process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (StripFET™) has enhanced power-handling capability, resulting in high-efficiency solutions.

The main features of their wide portfolio include the following:
  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, and the 1 mm high-surface-mount PowerFLAT™ 5 x 6 HV and VHV featuring excellent thermal performance thanks to a large, exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range, supporting applications such as switch-mode power supplies, lighting, DC-DC converters, motor control, and automotive applications, ST has the right MOSFET for the user's design.

View All of STMicroelectronics' Power MOSFETs

New Products:

STQ1NK80ZR-APSTD3NK100ZSTP60NF06STL3NM60NSTQ3N45K3-APSTP90NF03LSTP4NK80Z

Tags:

Power ManagementSemiconductors & Dev ToolsSTMicroelectronics

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