Diodes Incorporated introduces the DPS1035. This is a single-channel power switch designed to operate up to 24 V and is optimized for USB Type-C™ and power delivery applications which are rapidly becoming universal in many market segments. The DPS1035 integrates two MOSFET switches with very low R_DS(ON). The internal MOSFET switches are turned off to prevent damage to either the device or the end system when any of the following conditions becomes valid: a) the voltage level at the input port is below 3.7 V (typical); b) the voltage level at the output port becomes higher than that of the input port by 40 mV; c) the internal junction temperature exceeds 155ºC (typical). The output and input ports of the DPS1035 can be discharged by having the corresponding active-high DISCx pin asserted. The discharge path is through an internal 82 Ω resistor. The DPS1035 is packaged in a lead, halogen and antimony free QFN package which is fully RoHS-compliant. The 0.8 mm low-profile height and 4 mm x 4 mm footprint allow the device to be easily incorporated into end systems such as mobile and desktop computers, handheld game consoles, portable battery banks, PC monitors, and more.

Features

• Low on-state resistance
  • The low on-state resistance R_DS(ON) TYP = 30 mΩ (@ V_IN = 5 V to 20 V) enables maximum continuous current up to 3.5 A
• Adjustable overvoltage limit and output ramp-up speed
  • When the VBUS line of the USB-CTM connector level exceeds the value (6 V to 24 V typical) set by an external resistor, the internal MOSFET switches are turned off to prevent any possible damage. Ramp-up speed of the output voltage is adjusted via an external resistor to minimize the in-rush current
• Discharge of input and output ports
  • The output and input ports of the DPS1035 can be discharged by having the corresponding active-high DISCx pin asserted. The discharge path is through an internal 80 Ω resistor
• Undervoltage, reverse voltage, and over temperature protection
  • The internal MOSFET switches are turned off to prevent damage to either the device or the end system for the following conditions:
    • The voltage level at the input port is below 3.7 V (typical)
    • The voltage level at the output port becomes higher than that at the input port by 40 mV
    • The internal junction temperature exceeds 155ºC (typical)