Diodes' SBR2M60S1F is optimized to meet differing application requirements, utilizes Diodes' proprietary Super Barrier Rectifier® (SBR) technology, and are supplied in SOD123F packages. This device and the others in this family target rectification, blocking, and boost-conversion requirements in the industrial, communications, and consumer markets.

The SBR2M60S1F is optimized for low leakage, to minimize losses during blocking mode, and features an instantaneous reverse leakage of just 0.8 μA at 25°C and 0.4 mA at 175°C and it can handle a maximum 2 A IO and V_RRM of 60 V.

The SOD123F package has a PCB footprint of just 7 mm², which is approximately half that of the industry standard SMA package, and has a Rθ_JC of 40°C per watt, ensuring this package can deliver a similar thermal performance to the SMA package under comparable conditions. The SBR2M60S1F rectifiers are rated for operation up to 175°C making them ideal for use in high ambient temperature industrial environments.