Diodes' SDT series manufactured on the deep trench process achieve much lower forward voltage and reverse leakage current than Schottky diodes manufactured on the planar process. The difference between these two can be very substantial by more than 20% in the case of the SDT20B100CT, where the excellent performance-to-cost value is presented. These Schottky diodes are housed in the thermally efficient and fully green PowerDI®5, TO220AB, and ITO220AB packages. They are all suited for fully automated or labor-intensive manufacturing environments.

Features

• Excellent thermal transfer properties
  • The PowerDI5, TO220AB, and ITO220AB packages are all highly thermal efficient and RoHS compliant, allowing these devices to operate reliably in demanding applications and are well-suited to large-scale manufacturing facilities

• Low forward voltage
  • Developed on the trench technology, these devices offer much lower forward voltage (VF) than the planar-type Schottky diodes. The lower VF leads to better power efficiency at equal or better parity to the device cost

• Low reverse leakage current
  • The leakage current (IR) of these devices is as little as 3.5 µA. This excellent performance translates to smaller form-factor for the end-system

• High forward surge current
  • With forward surge current (IFSM) as high as 280 A and a reverse breakdown voltage (V_RRM) as much as 120 V, a high degree of device reliability and end system robustness are ensured