Diodes Incorporated's DESD3V3Z1BCSF is an ultra-low input capacitance (0.17 pF typical) TVS device in the data line protection product family, giving it a 66% lower insertion compared to the devices last released in the same product family. The device protects the high-speed I/O of mixed-signal systems-on-chip (SoCs) manufactured on the advanced nanometer process nodes. It features an ultra-compact (0.6 mm x 0.33 mm) footprint, 9 V breakdown voltage (VBR), 3 A maximum peak pulse current (IPP) and 4.5 V (typical) clamping voltage (VCL) per IEC61000-4-5 (8/20 µs). The DESD3V3Z1BCSF is designed to withstand reptitive ESD strikes (VESD) up to ±8 kV per IEC61000-4-2 for air and contact discharge.

DESD3V3Z1BCSF is well-suited for protecting high-speed interfaces, such as USB 3.1/3.2 (up to 20 Gbps) and Thunderbolt™ 3 (up to 40 Gbps), from possible ESD hazards. Housed in the green X2-DSN0603-2 package, the device is well-suited to fully automated manufacturing environments and easily fits into systems where space is at a premium.

Features

• Ultra-low channel input capacitance
  • With the input capacitance as low as 0.17 pF typ., the insertion loss over any pair of high-speed differential transmission lines meets or exceeds those required by USB 3.1/3.2 and Thunderbolt™ 3
• Low clamping voltage and reverse standoff voltage
  • With clamping voltage (VCL) of 4.5 A typ. for IPP = 3 A, and reverse standoff voltage (VRWM) at 3.3 V maximum, the device ensures the mixed signal SoC being protected operates comfortably within the safe limits
• IEC61000-4-2 and IEC61000-4-5 compliance
  • One channel of I/O protection at IEC61000-4-2 (ESD) up to ±8 kV air and contact, IEC61000-4-5 (8/20 µs surge) up to peak pulse current (IPP) of 3 A maximum
• Ultra-compact X2-DSN0603-2 package
  • The combination of the very small footprint (0.6 mm x 0.3 mm typ.) and ultra-low z-height (0.3 mm typ.) allow the device to fit in tight application environments