The π-MOS IX series, consisting of the TK650A60F, TK750A60F, TK1K2A60F, and TK1K9A60F, is based on Toshiba’s ninth generation 600 V planar MOSFET series.

With an optimized chip design, the π-MOS IX series provides 5 dB lower peak EMI noise than the current π-MOS VII series while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated direct current (DC), making it simple to replace existing MOSFETs.

Toshiba will expand the π-MOS IX series with the addition of more 600 V devices, 500 V devices, and 650 V devices.