SiT5357 MEMS Precision Super-TCXOs

By SiTime 54

SiT5357 MEMS Precision Super-TCXOs

SiTime Corporation’s SiT5357 series of ±100 ppb high-frequency MEMS precision super-TCXO device is engineered for high dynamic performance. It is fully compliant to the GR-1244 Stratum 3 oscillator specifications. By leveraging SiTime’s unique DualMEMS™ temperature sensing and TurboCompensation™ technology, the SiT5357 delivers the most stable timing in the presence of environmental stressors – airflow, temperature perturbation, vibration, shock, and electromagnetic interference (EMI). This device also integrates multiple on-chip regulators, providing power supply noise filtering and eliminating the need for a dedicated external LDO. SiT5357 can be factory-programmed to any combination of frequency, stability, voltage, and pull range. This programmability enables designers to optimize the clock configuration while eliminating the long lead time and customization costs associated with quartz TCXOs where each frequency is custom built. The SiT5357 delivers exceptional dynamic performance like resilience to environmental stressors such as shock, vibration, and fast temperature transients making it suitable for harsh environments.

Video - SiTime Elite Super - TCXO Dynamic Performance vs. Quartz TCXO

Features
  • Up to 220 MHz output frequency
    • Eliminates need for frequency multipliers
  • Exceptional dynamic stability under airflow, fast temperature ramp
    • ±100 ppb overtemperature stability
    • 3e-11 ADEV at 10 second average time
    • ±2.5 ppb/°C frequency slope, 10°C/min. ramp
    • Ensures system-level quality of service for telecom and networking equipment in hostile environments
  • 20x better phase noise under vibration
    • Minimizes call and/or link drops in high-vibration environments
  • Superior reliability
    • 1 billion hours MTBF
    • Lifetime warranty: Reduces repair costs and field failures due to clock components
  • No activity dips or micro jumps
    • Eliminates any need for costly screening or burn-in tests
  • 0.2 ps/mV power supply noise rejection (PSNR)
    • Reduces BOM by eliminating a dedicated LDO for TCXO
  • LVCMOS or clipped sinewave output
    • Optimizes for best balance between EMI and jitter
  • Rich programmable features
    • Any frequency between 1 MHz to 60 MHz
    • 2.25 V to 3.63 V
    • Large pull range from ±6.25 ppm to ±3200 ppm
    • Customize TCXO specifications for optimal system performance
  • Digital frequency tuning through I2C
    • Eliminate frequency shift caused by board noise
Applications
  • SONET/SDH Stratum 3
  • Synchronous Ethernet (G.8262, options 1 and 2)
  • Small cells
  • IEEE 1588 boundary clocks and grandmasters
  • Optical transport (OTN, OLT, etc.)
  • COSPAS/SARSAT
  • Broadband satellite
  • Instrumentation
  • Core and enterprise
  • Wireless and backhaul
  • Precision GNSS
  • GPS/GNSS modules
  • Railroads
  • Long-range communications
  • Indoor positioning
  • Smart farming

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