STMicroelectronics’ STL12N10F7 N-channel 100 V, 11.3 mΩ typical, 12 A power MOSFET in a PowerFLAT™ 3.3 x 3.3 package utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

• Among the lowest R_DS(ON) on the market
• Excellent FoM (figure of merit)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness