GaN ICs for Wireless Power

By EPC 72

EPC’s 100 V EPC2107 and 60 V EPC2108 eGaN half-bridge power integrated circuits with integrated bootstrap FET eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp. Designed specifically for resonant wireless power transfer applications, these products enable rapid design of highly efficient end-use systems, setting the stage for mass adoption of wireless power circuits.

Features

Higher switching frequency
- Lower switching losses, lower parasitic inductance, and lower drive power
Integrated design
- Increased efficiency, increased power density, reduced assembly costs
Small footprint
- Low inductance, extremely small, 1.35 mm x 1.35 mm BGA surface-mount passivated die

Applications