Texas Instruments' LMG3410R070 GaN power stage with integrated driver and protection enables the user to achieve new levels of power density and efficiency in power electronics systems. The LMG3410R070 features inherent advantages over silicon metal oxide semiconductor field-effect transistors (MOSFETs) including ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce electromagnetic interference (EMI). These advantages enable dense and efficient topologies including the totem-pole power factor correction (PFC).

The LMG3410R070 provides a smart alternative to traditional cascode GaNs and standalone GaN field-effect transistors (FETs) by integrating a unique set of features to simplify design, maximize reliability, and optimize the performance of any power supply. An integrated gate drive enables 100 V/ns switching with near zero V_DS ringing, < 100 ns current limiting self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.