Littelfuse's 650 V TO-220-2L GEN2 SiC Schottky barrier diode series of silicon carbide (SiC) Schottky diodes have negligible reverse recovery current, high surge capability, and maximum operating junction temperature of +175°C. These diodes are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Compared to standard silicon bipolar power diodes, GEN2 SiC Schottky diodes dramatically reduce switching losses and enable substantial increases in the efficiency and robustness of power electronics systems.