Texas Instruments' UCC23513EVM-014 evaluation module is designed for evaluation of TI's UCC23513 5 kV_RMS isolated single-channel gate driver with opto-compatible input. The input is current driven and requires between 7 mA and 16 mA for device turn-on. The module can be reverse-biased for turn-off. The device is capable of 4 A source and 5 A sink peak output current for driving Si MOSFETs and IGBTs, and WBG devices such as SiC and GaN transistors.

The UCC23513 is an opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs, and SiC MOSFETs. The driver offers 4.5 A source and 5.3 A sink peak output current and 5.7 kV_RMS reinforced isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23513 can drive low-side and high-side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler-based gate drivers while maintaining pin-to-pin compatibility in schematic and layout design. Performance highlights of the device include high common-mode transient immunity (CMTI), low propagation delay, and small pulse-width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (ediode) which means long-term reliability and excellent aging characteristics compared to traditional LEDs. The gate driver is offered in a stretched SO6 package with greater than 8.5 mm creepage and clearance and a mold compound from material Group I which has a comparative tracking index (CTI) greater than 600 V. The high performance and reliability makes the UCC23513 ideal for use in motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens opportunities for applications not previously able to be supported by traditional optocouplers.